? semiconductor components industries, llc, 2007 november, 2007 - rev. 13 1 publication order number: bdx53b/d bdx53b, bdx53c (npn), bdx54b, bdx54c (pnp) plastic medium-power complementary silicon transistors these devices are designed for general-purpose amplifier and low-speed switching applications. features ? high dc current gain - h fe = 2500 (typ) @ i c = 4.0 adc ? collector emitter sustaining voltage - @ 100 madc v ceo(sus) = 80 vdc (min) - bdx53b, 54b v ceo(sus) = 100 vdc (min) - bdx53c, 54c ? low collector-emitter saturation voltage - v ce(sat) = 2.0 vdc (max) @ i c = 3.0 adc v ce(sat) = 4.0 vdc (max) @ i c = 5.0 adc ? monolithic construction with built-in base-emitter shunt resistors ? pb-free packages are available* ??????????????????? ??????????????????? maximum ratings ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? ???????????? collector-emitter voltage bdx53b, bdx54b bdx53c, bdx54c ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????????? ???????????? ???????????? ???????????? ??? ??? ??? ??? ???? ???? ???? ???? ??? ??? ??? ??? ???????????? ??? ???? ??? ???????????? ???????????? ???????????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? c derate above 25 c ??? ??? ???? ???? ??? ??? c ???????????? ???????????? ???????????? ??? ??? ??? ???? ???? ???? ??? ??? ??? c ??????????????????? ??????????????????? thermal characteristics ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? thermal resistance, junction-to-ambient ??? ??? ja ???? ???? ??? ??? c/w ???????????? ???????????? ??? ??? jc ???? ???? ??? ??? c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. darlington 8 ampere complementary silicon power transistors 80-100 volts, 65 watts to-220ab case 221a style 1 1 2 3 4 marking diagram & pin assignment 1 base 3 emitter 4 collector 2 collector http://onsemi.com bdx5xy = device code x = 3 or 4 y = b or c a = assembly location y = year ww = work week g = pb-free package bdx5xyg ay ww see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information
bdx53b, bdx53c (npn), bdx54b, bdx54c (pnp) http://onsemi.com 2 80 40 20 0 20 40 80 100 120 160 figure 1. power derating t, temperature ( c) p d , power dissipation (watts) 60 t a t c 4.0 2.0 1.0 3.0 0 60 140 t a t c ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector-emitter sustaining voltage (note 1) (i c = 100 madc, i b = 0) bdx53b, bdx54b bdx53c, bdx54c ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 1) ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? ?????????????????????? small-signal current gain (i c = 3.0 adc, v ce = 4.0 vdc, f = 1.0 mhz) ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? 300 s, duty cycle 2%.
bdx53b, bdx53c (npn), bdx54b, bdx54c (pnp) http://onsemi.com 3 figure 2. switching time test circuit 5.0 0.1 figure 3. switching times i c , collector current (amp) t, time (s) 3.0 0.7 0.5 0.3 0.2 0.05 0.2 0.3 0.7 3.0 10 t d @ v be(off) = 0 v v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c t f 0.07 1.0 5.0 t s t r 0.1 1.0 2.0 0.5 2.0 7.0 0 v cc - 30 v scope tut + 4.0 v t r , t f 10 ns duty cycle = 1.0% r c d 1 must be fast recovery types, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 25 s d 1 51 r b and r c varied to obtain desired current levels v 2 approx + 8.0 v v 1 approx -12 v 8.0 k 120 for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities r b figure 4. thermal response t, time or pulse width (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 r(t) effective transient thermal resist ance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 500 r jc (t) = r(t) r jc r jc = 1.92 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.05 0.1 0.02 0.01 single pulse 0.03 0.3 3.0 30 300 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited 1.0 figure 5. active-region safe operating area 20 2.0 0.05 10 20 100 t j = 150 c 0.2 5.0 0.5 i c , collector current (amp) v ce , collector-emitter voltage (volts) 10 30 70 1.0 0.1 dc 2.0 50 3.0 5.0 7.0 5.0 ms 1.0 ms 100 s bdx53b, bdx54b bdx53c, bdx54c curves apply below rated v ceo 0.02 500 s there are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. safe operating area curves indicate i c -v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values l ess than the limitations imposed by second breakdown.
bdx53b, bdx53c (npn), bdx54b, bdx54c (pnp) http://onsemi.com 4 10,000 1.0 figure 6. small\signal current gain f, frequency (khz) 10 2.0 5.0 10 20 50 100 200 1000 500 300 100 5000 h fe , small-signal current gain 20 3000 200 500 2000 1000 30 50 t j = 25 c v ce = 3.0 v i c = 3.0 a 300 0.1 figure 7. capacitance v r , reverse voltage (volts) 30 1.0 2.0 5.0 20 100 10 c, capacitance (pf) 200 100 70 50 t j = + 25 c c ib c ob 50 0.2 0.5 pnp npn pnp npn 0.1 figure 8. dc current gain i c , collector current (amp) 0.2 0.3 0.5 0.7 1.0 2.0 10 500 300 h fe , dc current gain t j = 150 c 25 c -55 c v ce = 4.0 v 200 7.0 npn bdx53b, 53c pnp bdx54b, 54c 20,000 5000 10,000 3000 2000 1000 3.0 5.0 0.1 i c , collector current (amp) 0.2 0.3 0.5 0.7 1.0 2.0 10 500 300 h fe , dc current gain t j = 150 c 25 c -55 c 200 7.0 20,000 5000 10,000 3000 2000 1000 3.0 5.0 v ce = 4.0 v v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) figure 9. collector saturation region 3.0 i b , base current (ma) 0.3 0.5 1.0 2.0 3.0 5.0 7.0 30 2.6 2.2 1.8 1.4 i c = 2.0 a t j = 25 c 4.0 a 6.0 a 1.0 0.7 20 10 3.0 i b , base current (ma) 0.3 0.5 1.0 2.0 3.0 5.0 7.0 30 2.6 2.2 1.8 1.4 i c = 2.0 a t j = 25 c 4.0 a 6.0 a 1.0 0.7 20 10
bdx53b, bdx53c (npn), bdx54b, bdx54c (pnp) http://onsemi.com 5 i c , collector current (amp) v be(sat) @ i c /i b = 250 v, voltage (volts) figure 10. on voltages i c , collector current (amp) v, voltage (volts) v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 t j = 25 c v be @ v ce = 4.0 v v be @ v ce = 4.0 v v ce(sat) @ i c /i b = 250 t j = 25 c 0.1 0.2 0.3 0.5 0.7 1.0 2.0 10 7.0 3.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 10 7.0 3.0 5.0 3.0 2.5 2.0 1.5 1.0 0.5 3.0 2.5 2.0 1.5 1.0 0.5 v , temperature coefficient (mv/ c) v , temperature coefficient (mv/ c) +5.0 figure 11. temperature coefficients i c , collector current (amp) 0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10 -55 to 150 c +4.0 +3.0 +1.0 0 -4.0 -1.0 -2.0 -3.0 -5.0 vb for v be * vc for v ce(sat) -55 c to 25 c 25 c to 150 c 25 c to 150 c *i c /i b h fe/3 0.5 0.7 +2.0 npn bdx53b, bdx53c pnp bdx54b, bdx54c +5.0 i c , collector current (amp) 0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10 -55 to 150 c +4.0 +3.0 +1.0 0 -4.0 -1.0 -2.0 -3.0 -5.0 vb for v be * vc for v ce(sat) -55 c to 25 c 25 c to 150 c 25 c to 150 c *i c /i b h fe/3 0.5 0.7 +2.0 figure 12. collector cut-off region 10 5 v be , base\emitter voltage (volts) 10 2 10 1 10 0 , collector current (a) i c 10 -1 +0.2 +0.4 0 -0.2 -0.4 -0.6 v ce = 30 v reverse forward 10 3 10 4 +0.6 +0.8 +1.0 +1.2 + 1.4 t j = 150 c 100 c 25 c 10 5 v be , base\emitter voltage (volts) 10 2 10 1 10 0 , collector current (a) i c 10 -1 -0.2 -0.4 0 +0.2 +0.4 +0.6 v ce = 30 v t j = 150 c 100 c 25 c reverse forward 10 3 10 4 -0.6 -0.8 -1.0 -1.2 -1.4
bdx53b, bdx53c (npn), bdx54b, bdx54c (pnp) http://onsemi.com 6 figure 13. darlington schematic npn bdx53b bdx53c pnp bdx54b bdx54c base collector emitter 8.0 k 120 base collector emitter 8.0 k 120 ordering information device package shipping ? bdx53b to-220 50 units / rail bdx53bg to-220 (pb-free) bdx53c to-220 50 units / rail BDX53CG to-220 (pb-free) bdx54b to-220 50 units / rail bdx54bg to-220 (pb-free) bdx54c to-220 50 units / rail bdx54cg to-220 (pb-free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
bdx53b, bdx53c (npn), bdx54b, bdx54c (pnp) http://onsemi.com 7 package dimensions to-220 case 221a-09 issue ae notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane -t- c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 bdx53b/d literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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